Infineon Begins World's First 300 mm Silicon Carbide Wafer Production
Infineon Technologies has successfully processed 300-millimeter silicon carbide wafers into functional power devices at its Villach, Austria facility. The company confirmed it is the first to achieve this manufacturing milestone within a full-scale fab using adapted silicon equipment.
- Production on 300 mm wafers is significantly more efficient than previous 200 mm standards.
- The process utilizes existing silicon manufacturing tools to lower adoption barriers.
- This milestone secures long-term supply capacities for high-performance SiC power semiconductors.